PBSS5580PA,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 80V 4A 3HUSON
$0.55
Available to order
Reference Price (USD)
3,000+
$0.15105
6,000+
$0.14310
15,000+
$0.13515
30,000+
$0.13118
Exquisite packaging
Discount
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The PBSS5580PA,115 from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the PBSS5580PA,115 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of PBSS5580PA,115 and enhance your electronic projects with this top-quality component from Nexperia USA Inc..
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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