PBSS8110D,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 100V 1A 6TSOP
$0.48
Available to order
Reference Price (USD)
3,000+
$0.09000
6,000+
$0.08500
15,000+
$0.07750
30,000+
$0.07250
75,000+
$0.07000
Exquisite packaging
Discount
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Optimize your electronic systems with the PBSS8110D,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PBSS8110D,115 delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
- Power - Max: 700 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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