PBSS8110T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 100V 1A TO236AB
$0.49
Available to order
Reference Price (USD)
3,000+
$0.10797
6,000+
$0.10271
15,000+
$0.09481
30,000+
$0.08954
75,000+
$0.08691
Exquisite packaging
Discount
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Discover the PBSS8110T,215 Bipolar Junction Transistor (BJT) from Nexperia USA Inc., a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the PBSS8110T,215 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Nexperia USA Inc. for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
- Power - Max: 480 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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