PDTA113EMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA113EMB - SMALL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose PDTA113EMB,315 for its exceptional linearity in amplification circuits. NXP USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
Related Products
onsemi
SMUN2113T1G
Panasonic Electronic Components
DRA5143T0L
Toshiba Semiconductor and Storage
RN1310,LF
Toshiba Semiconductor and Storage
RN1401,LXHF
Diotec Semiconductor
MMBTRA103SS
Diodes Incorporated
DDTC114ECAQ-13-F
Diodes Incorporated
DDTC143EE-7
Diodes Incorporated
DDTD113ZC-7-F
onsemi
MUN2137T1
Nexperia USA Inc.