PDTA114EMB,315
Nexperia USA Inc.

Nexperia USA Inc.
TRANS PREBIAS PNP 50V DFN1006B-3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
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Meet the PDTA114EMB,315 Nexperia USA Inc.'s answer to modern circuit design challenges. This pre-biased bipolar transistor combines 2N3904 compatibility with enhanced thermal characteristics. Key applications include: Electric vehicle charging stations Industrial IoT gateways Smart meter modules With 100% automated production testing, each unit delivers military-grade reliability for critical infrastructure projects.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3