PDTA114TE,115
NXP USA Inc.
NXP USA Inc.
NEXPERIA PDTA114TE - SMALL SIGNA
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTA114TE,115 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the PDTA114TE,115 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
AC847CWQ-7
Central Semiconductor Corp
2N4123 PBFREE
Solid State Inc.
PMD13K40
Microchip Technology
JANTX2N3440
Renesas Electronics America Inc
2SC1213C-E
Fairchild Semiconductor
BC80716MTF
Infineon Technologies
BCX6816E6327HTSA1
Infineon Technologies
BCX69-10E6327
Microchip Technology
JAN2N3700
Solid State Inc.