PDTA115TMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA115TMB - SMALL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
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Engineers choose PDTA115TMB,315 for its exceptional linearity in amplification circuits. NXP USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
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