PDTA123JU,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 50V SOT323
$0.20
Available to order
Reference Price (USD)
1+
$0.17000
10+
$0.16000
100+
$0.08690
500+
$0.05346
1,000+
$0.03645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose PDTA123JU,115 for its exceptional linearity in amplification circuits. Nexperia USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
Rohm Semiconductor
DTA144EUAT106
Nexperia USA Inc.
PDTC114YQBZ
NXP USA Inc.
PDTA124TE,115
Infineon Technologies
BCR169WH6327XTSA1
onsemi
SMUN5114T1G
Rohm Semiconductor
DTC113ZEBTL
Diodes Incorporated
DDTA143ECA-7-F
Toshiba Semiconductor and Storage
RN1418,LF
Nexperia USA Inc.
PDTC144EQC-QZ
Nexperia USA Inc.