PDTA143EMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA143EMB - SMALL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTA143EMB,315 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the PDTA143EMB,315 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of PDTA143EMB,315 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 180MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
Related Products
Nexperia USA Inc.
BC807-25LR
Infineon Technologies
BC858BWH6327XTSA1
onsemi
MPS2222RLRM
Central Semiconductor Corp
CZTA44HC TR
onsemi
2SA2031
Microchip Technology
JANSL2N2369AUB/TR
NXP Semiconductors
PMXB65ENEZ
onsemi
SBC807-25LT1
onsemi
MJE18204
Panjit International Inc.