PDTC115ET,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
$0.17
Available to order
Reference Price (USD)
3,000+
$0.03304
6,000+
$0.03009
15,000+
$0.02655
30,000+
$0.02419
75,000+
$0.02183
150,000+
$0.01947
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTC115ET,215 from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Nexperia USA Inc.'s expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 20 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Toshiba Semiconductor and Storage
RN2115,LF(CT
Diodes Incorporated
DDTA144GE-7-F
Nexperia USA Inc.
PDTA123ET,215
Rohm Semiconductor
DTA044TMT2L
onsemi
MUN5237T1
Diodes Incorporated
DDTA143ZUA-7
Rohm Semiconductor
DTA144EMFHAT2L
onsemi
DTA115TM3T5G
Nexperia USA Inc.
PDTA144TU,115
Diodes Incorporated