PDTC124XQB-QZ
Nexperia USA Inc.
Nexperia USA Inc.
PDTC124XQB-Q/SOT8015/DFN1110D-
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
Discount
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Engineers choose PDTC124XQB-QZ for its exceptional linearity in amplification circuits. Nexperia USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230 MHz
- Power - Max: 340 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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