PDTC143XQAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 3DFN
$0.05
Available to order
Reference Price (USD)
5,000+
$0.03800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTC143XQAZ from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Nexperia USA Inc.'s expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 280 mW
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
Related Products
Rohm Semiconductor
DTC123TKAT146
Nexperia USA Inc.
PDTB143XTR
onsemi
MMUN2234LT1
Rohm Semiconductor
DTA123YEFRATL
Rohm Semiconductor
DTC114YETL
Panasonic Electronic Components
UNR51ANG0L
Toshiba Semiconductor and Storage
RN2403,LXHF
onsemi
DTA113EET1G
Toshiba Semiconductor and Storage
RN1106,LF(CT
onsemi