PEMB9,315
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2PNP 50V SOT666
$0.07
Available to order
Reference Price (USD)
8,000+
$0.05940
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the PEMB9,315 by Nexperia USA Inc., a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the PEMB9,315 excels in automotive systems, power management modules, and communication devices. Nexperia USA Inc.'s commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose PEMB9,315 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Nexperia USA Inc.
PUMH9,165
Nexperia USA Inc.
PRMH11Z
NXP USA Inc.
PBLS2003S,115
Toshiba Semiconductor and Storage
RN4983FE,LF(CT
Panasonic Electronic Components
DMC564070R
Diodes Incorporated
DDC114TU-7-F
onsemi
NSVBC124XDXV6T1G
Rohm Semiconductor
IMH9AT110
onsemi
SMUN5111T1
Nexperia USA Inc.