PEMD17,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.04
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Nexperia USA Inc.'s PEMD17,115, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Nexperia USA Inc.'s dedication to excellence ensures that the PEMD17,115 meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Nexperia USA Inc.
PQMH9Z
Nexperia USA Inc.
PIMP31-QX
Diodes Incorporated
UMG4N-7
Rohm Semiconductor
EMH2T2R
Nexperia USA Inc.
NHUMB11F
onsemi
NSB13211DW6T1G
Panasonic Electronic Components
UP0421300L
Infineon Technologies
BCR183SH6327XTSA1
Nexperia USA Inc.
PUMD13,135
onsemi