PEMH17,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PEMH17 - SMALL SIGN
$0.04
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
Discount
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Optimize your designs with NXP USA Inc.'s PEMH17,115, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The PEMH17,115 is widely used in lighting systems, portable electronics, and automotive accessories. NXP USA Inc.'s innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the PEMH17,115 is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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