PHB191NQ06LT,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 55V 75A D2PAK
$3.20
Available to order
Reference Price (USD)
800+
$1.08781
1,600+
$0.99831
2,400+
$0.92946
5,600+
$0.89504
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PHB191NQ06LT,118 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PHB191NQ06LT,118 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95.6 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 7665 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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