PHD13005,127
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
$0.61
Available to order
Reference Price (USD)
1+
$0.57000
10+
$0.48500
100+
$0.36190
500+
$0.28436
1,000+
$0.21973
Exquisite packaging
Discount
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Discover the PHD13005,127 Bipolar Junction Transistor (BJT) from WeEn Semiconductors, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the PHD13005,127 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose WeEn Semiconductors for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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