PHKD13N03LT,518
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
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The PHKD13N03LT,518 by NXP USA Inc. is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the PHKD13N03LT,518 ensures consistent and dependable performance. NXP USA Inc.'s commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.4A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
- Power - Max: 3.57W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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