PIMZ2,125
Nexperia USA Inc.

Nexperia USA Inc.
TRANS NPN/PNP 50V 0.15A 6TSOP
$0.08
Available to order
Reference Price (USD)
3,000+
$0.06000
Exquisite packaging
Discount
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The PIMZ2,125 BJT Array from Nexperia USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The PIMZ2,125 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz, 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP