PJD35N06A-AU_L2_000A1
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.86
Available to order
Reference Price (USD)
1+
$0.86000
500+
$0.8514
1000+
$0.8428
1500+
$0.8342
2000+
$0.8256
2500+
$0.817
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PJD35N06A-AU_L2_000A1 from Panjit International Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PJD35N06A-AU_L2_000A1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Panjit International Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STD18N55M5
Infineon Technologies
IRFI7446GPBF
Goford Semiconductor
G60N04K
IXYS
IXTT3N200P3HV
Renesas Electronics America Inc
UPA1874GR-9JG-E1-A
Vishay Siliconix
SUD50P06-15-GE3
STMicroelectronics
STU3LN80K5
STMicroelectronics
STL260N4F7
Fairchild Semiconductor
FDPF7N60NZT
Nexperia USA Inc.