PJF4NA70_T0_00001
Panjit International Inc.
Panjit International Inc.
700V N-CHANNEL MOSFET
$1.15
Available to order
Reference Price (USD)
1+
$1.15000
500+
$1.1385
1000+
$1.127
1500+
$1.1155
2000+
$1.104
2500+
$1.0925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the PJF4NA70_T0_00001 single MOSFET from Panjit International Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PJF4NA70_T0_00001 combines cutting-edge technology with Panjit International Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFK360N15T2
onsemi
NVTFS005N04CTAG
onsemi
NTMS4700NR2
Nexperia USA Inc.
BUK9GTHP-55PJTR,51
Sanken
SKP253
Diodes Incorporated
DMN3009SSS-13
Vishay Siliconix
SQJ463EP-T1_GE3
UnitedSiC
UF3SC120040B7S
Infineon Technologies
IRFSL7534PBF
onsemi