Shopping cart

Subtotal: $0.00

PJF9NA90_T0_00001

Panjit International Inc.
PJF9NA90_T0_00001 Preview
Panjit International Inc.
900V N-CHANNEL MOSFET
$2.61
Available to order
Reference Price (USD)
1+
$2.61000
500+
$2.5839
1000+
$2.5578
1500+
$2.5317
2000+
$2.5056
2500+
$2.4795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack

Related Products

Fairchild Semiconductor

HUF76013P3

Renesas Electronics America Inc

2SK3116B(1)-ZK-E2-AY

Infineon Technologies

AUIRFS3207ZTRL

Rohm Semiconductor

R6535KNX3C16

Vishay Siliconix

SIRA04DP-T1-GE3

Texas Instruments

CSD19505KTTT

Infineon Technologies

AUIRFR9024NTRL

Alpha & Omega Semiconductor Inc.

AOTF9N90

Top