PJMF600N65E1_T0_00001
Panjit International Inc.
Panjit International Inc.
650V SUPER JUNCITON MOSFET
$1.86
Available to order
Reference Price (USD)
1+
$1.86000
500+
$1.8414
1000+
$1.8228
1500+
$1.8042
2000+
$1.7856
2500+
$1.767
Exquisite packaging
Discount
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Optimize your power electronics with the PJMF600N65E1_T0_00001 single MOSFET from Panjit International Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PJMF600N65E1_T0_00001 combines cutting-edge technology with Panjit International Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB-F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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