PJQ1820_R1_00001
Panjit International Inc.
Panjit International Inc.
DFN1010-6L, MOSFET
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ1820_R1_00001 from Panjit International Inc. is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the PJQ1820_R1_00001 provides reliable performance in demanding environments. Choose Panjit International Inc. for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN
- Supplier Device Package: DFN1010-6L
Related Products
Diodes Incorporated
BSS84DWQ-13
Infineon Technologies
IPA60R600E6
Diodes Incorporated
2N7002VAC-7
Vishay Siliconix
SQ4937EY-T1_GE3
onsemi
FDMS3664S
Diodes Incorporated
DMN5L06DMK-7
Fairchild Semiconductor
FDS3601
Intersil
ISL6605CB-TS2495
Advanced Linear Devices Inc.
ALD310704APCL
Diodes Incorporated