PJQ2405_R1_00001
Panjit International Inc.
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
$0.64
Available to order
Reference Price (USD)
1+
$0.64000
500+
$0.6336
1000+
$0.6272
1500+
$0.6208
2000+
$0.6144
2500+
$0.608
Exquisite packaging
Discount
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Upgrade your designs with the PJQ2405_R1_00001 by Panjit International Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PJQ2405_R1_00001 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020B-6
- Package / Case: 6-WDFN Exposed Pad
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