PJQ4476AP_R2_00001
Panjit International Inc.
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
Discount
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The PJQ4476AP_R2_00001 by Panjit International Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Panjit International Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 62W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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