PJQ5426_R2_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$1.12
Available to order
Reference Price (USD)
1+
$1.12000
500+
$1.1088
1000+
$1.0976
1500+
$1.0864
2000+
$1.0752
2500+
$1.064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PJQ5426_R2_00001 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJQ5426_R2_00001 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SIR403EDP-T1-GE3
IXYS
IXFR32N80Q3
Taiwan Semiconductor Corporation
TSM100N06CZ C0G
Diodes Incorporated
DMT10H025SSS-13
Infineon Technologies
IRF6644TRPBF
onsemi
CPH3431-TL-E
Micro Commercial Co
MCG55P02A-TP
Alpha & Omega Semiconductor Inc.
AOT12N40L
Toshiba Semiconductor and Storage
TK49N65W,S1F
onsemi