PJQ5462A_R2_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ5462A_R2_00001 single MOSFET from Panjit International Inc. is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the PJQ5462A_R2_00001 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
Related Products
Nexperia USA Inc.
BUK6D30-40EX
Toshiba Semiconductor and Storage
TK13A55DA(STA4,QM)
Renesas Electronics America Inc
RJK03N6DPA-00#J5A
Infineon Technologies
IPI90N06S4L04AKSA2
Fairchild Semiconductor
FDD6680AS
Fairchild Semiconductor
FDFMA2P853T
Infineon Technologies
IPP530N15N3GXKSA1
onsemi
MMFT1N10ET3
Vishay Siliconix
SI1021R-T1-GE3
STMicroelectronics