PJQ5606_R2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ5606_R2_00001 by Panjit International Inc. is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the PJQ5606_R2_00001 offers superior functionality and longevity. Trust Panjit International Inc. to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
- Power - Max: 1.7W (Ta), 21W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5060B-8
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