PJQ5846_R2_00001
Panjit International Inc.
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
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Choose the PJQ5846_R2_00001 from Panjit International Inc. for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the PJQ5846_R2_00001 stands out for its reliability and efficiency. Panjit International Inc.'s advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
- Power - Max: 1.7W (Ta), 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5060B-8
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