PJQ5866A_R2_00001
Panjit International Inc.
Panjit International Inc.
60V DUAL N-CHANNEL ENHANCEMENT M
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the PJQ5866A_R2_00001 from Panjit International Inc., a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the PJQ5866A_R2_00001 provides the reliability and efficiency you need. Panjit International Inc.'s cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
- Power - Max: 1.7W (Ta), 56W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5060B-8
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