PJS6600_S1_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
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Discover the high-performance PJS6600_S1_00001 from Panjit International Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the PJS6600_S1_00001 delivers unmatched performance. Trust Panjit International Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.1A (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V, 125pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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