PJS6604_S2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the PJS6604_S2_00001 from Panjit International Inc., a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the PJS6604_S2_00001 provides the reliability and efficiency you need. Panjit International Inc.'s cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 15V, 443pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Related Products
Nexperia USA Inc.
PMT280ENEA,115
Wolfspeed, Inc.
EAB450M12XM3
National Semiconductor
LM5100CMY
Diodes Incorporated
DMP2200UDW-13
Micro Commercial Co
MCM2301-TP
Vishay Siliconix
SI1016X-T1-GE3
Infineon Technologies
BSL215CH6327XTSA1
onsemi
NTJD5121NT1G
Diodes Incorporated
DMN5L06VK-7
Rohm Semiconductor