PJT7601_R1_00001
Panjit International Inc.
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJT7601_R1_00001 by Panjit International Inc. is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the PJT7601_R1_00001 offers superior functionality and longevity. Trust Panjit International Inc. to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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