PJX8806_R1_00001
Panjit International Inc.
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJX8806_R1_00001 by Panjit International Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PJX8806_R1_00001 provides reliable operation under stringent conditions. Panjit International Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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