PMBFJ109,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
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The PMBFJ109,215 from NXP USA Inc. is a high-performance Junction Field-Effect Transistor (JFET) designed for precision analog applications. As part of our Discrete Semiconductor Products collection, this JFET offers exceptional input impedance and low noise characteristics. These transistors feature controlled pinch-off voltage and stable operation across wide temperature ranges, making them ideal for demanding electronic circuits. Commonly used in audio amplifiers, instrumentation systems, and sensor interfaces, the PMBFJ109,215 provides reliable performance in RF stages, mixer circuits, and low-noise preamplifiers. Engineers particularly value this series for its consistent parameters and durability in industrial environments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 40 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
- Resistance - RDS(On): 12 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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