PMBFJ177,215
NXP USA Inc.
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
$0.00
Available to order
Reference Price (USD)
3,000+
$0.16568
6,000+
$0.15696
15,000+
$0.14824
30,000+
$0.14388
Exquisite packaging
Discount
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NXP USA Inc.'s PMBFJ177,215 redefines expectations for JFETs in the Discrete Semiconductor Products category. This dual-gate version offers unique flexibility for multiplier and mixer applications with exceptional isolation between gates. Key technical highlights include precisely matched channels, low feedback capacitance, and symmetrical transfer characteristics. The PMBFJ177,215 dominates in spectrum analyzers, vector network analyzers, and advanced communication test equipment. Its superior performance in phase-sensitive detection circuits makes it invaluable in lock-in amplifiers and synchronous demodulators. The radiation-tolerant variant has been successfully deployed in space telescopes and particle physics experiments, demonstrating its exceptional reliability.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Resistance - RDS(On): 300 Ohms
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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