PMBFJ309,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 250MW SOT23
$0.00
Available to order
Reference Price (USD)
3,000+
$0.15466
6,000+
$0.14652
15,000+
$0.13838
30,000+
$0.13431
Exquisite packaging
Discount
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Discover the PMBFJ309,215 JFET transistor by NXP USA Inc., a standout in our Discrete Semiconductor Products catalog. Designed for critical switching and amplification tasks, this JFET offers unmatched gate control and channel conductivity. The product features optimized geometry for reduced parasitic capacitance and improved high-speed performance. Typical applications include aerospace electronics, telecommunications infrastructure, and precision voltage regulators. The PMBFJ309,215 is particularly effective in phase-locked loops, sample-and-hold circuits, and chopper-stabilized amplifiers. With its robust construction and military-grade reliability, this JFET meets the stringent requirements of defense and automotive applications where component failure is not an option.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Resistance - RDS(On): 50 Ohms
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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