PMBT2222AQAZ
Nexperia USA Inc.
Nexperia USA Inc.
PMBT2222AQA/SOT1215/DFN1010D-3
$0.33
Available to order
Reference Price (USD)
5,000+
$0.06248
10,000+
$0.05406
25,000+
$0.05126
50,000+
$0.04845
125,000+
$0.04284
Exquisite packaging
Discount
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The PMBT2222AQAZ Bipolar Junction Transistor (BJT) by Nexperia USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PMBT2222AQAZ provides consistent performance in demanding applications. Choose Nexperia USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 325 mW
- Frequency - Transition: 340MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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