PMBT2907AMBYL
Nexperia USA Inc.
Nexperia USA Inc.
PMBT2907AMB/SOT883/XQFN3
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04452
30,000+
$0.04221
50,000+
$0.03990
100,000+
$0.03597
250,000+
$0.03528
Exquisite packaging
Discount
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Upgrade your electronic designs with the PMBT2907AMBYL Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the PMBT2907AMBYL is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Nexperia USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 210MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3
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