PMBT2907AQAZ
Nexperia USA Inc.
Nexperia USA Inc.
PMBT2907AQA/SOT1215/DFN1010D-3
$0.05
Available to order
Reference Price (USD)
5,000+
$0.06248
10,000+
$0.05406
25,000+
$0.05126
50,000+
$0.04845
125,000+
$0.04284
Exquisite packaging
Discount
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Enhance your circuit designs with the PMBT2907AQAZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PMBT2907AQAZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 325 mW
- Frequency - Transition: 210MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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