PMBT4401,185
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 40V 0.6A TO236AB
$0.02
Available to order
Reference Price (USD)
30,000+
$0.01656
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the PMBT4401,185 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PMBT4401,185 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Nexperia USA Inc.
PZT2907A,115
Rohm Semiconductor
2SAR573D3FRATL
onsemi
2N3904TFR
Nexperia USA Inc.
BC847CMB,315
Comchip Technology
BC856AW-G
Diodes Incorporated
ZXT10N50DE6TA
Diodes Incorporated
ZTX1149A
Nexperia USA Inc.
BCX19,235
Taiwan Semiconductor Corporation
BC848BW RFG
Nexperia USA Inc.