PMBT5550,235
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
$0.35
Available to order
Reference Price (USD)
10,000+
$0.03825
30,000+
$0.03600
50,000+
$0.03375
100,000+
$0.03150
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMBT5550,235 Bipolar Junction Transistor (BJT) by Nexperia USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PMBT5550,235 provides consistent performance in demanding applications. Choose Nexperia USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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