PMDPB30XN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 4A 6HUSON
$0.57
Available to order
Reference Price (USD)
3,000+
$0.18573
6,000+
$0.17528
15,000+
$0.16483
30,000+
$0.15751
75,000+
$0.15675
Exquisite packaging
Discount
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Elevate your electronics with the PMDPB30XN,115 from Nexperia USA Inc., a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the PMDPB30XN,115 provides the reliability and efficiency you need. Nexperia USA Inc.'s cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Power - Max: 490mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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