PMDPB55XP,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2P-CH 20V 3.4A 6HUSON
$0.16
Available to order
Reference Price (USD)
3,000+
$0.34133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the PMDPB55XP,115 from Nexperia USA Inc. for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the PMDPB55XP,115 stands out for its reliability and efficiency. Nexperia USA Inc.'s advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
- Power - Max: 490mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
Related Products
Diodes Incorporated
DMN3055LFDBQ-7
onsemi
NVMFD5C470NT1G
Alpha & Omega Semiconductor Inc.
AON7611
Vishay Siliconix
SI4932DY-T1-GE3
Diodes Incorporated
DMN2022UNS-13
Vishay Siliconix
SIZF300DT-T1-GE3
Diodes Incorporated
ZXMC3A16DN8TC
Texas Instruments
CSD87351ZQ5D
Renesas Electronics America Inc
HAT2043R-EL-E
Wolfspeed, Inc.