PMDPB56XN,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 3.1A HUSON6
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
Discount
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The PMDPB56XN,115 by NXP USA Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PMDPB56XN,115 provides reliable operation under stringent conditions. NXP USA Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.1A
- Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
- Power - Max: 510mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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