PMEM4020ND,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN 40V 0.95A SC74
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
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The PMEM4020ND,115 Bipolar Junction Transistor (BJT) from NXP USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PMEM4020ND,115 is a reliable component for demanding applications. NXP USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 950 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 600 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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