PMN25ENEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 6.1A 6TSOP
$0.16
Available to order
Reference Price (USD)
1+
$0.16197
500+
$0.1603503
1000+
$0.1587306
1500+
$0.1571109
2000+
$0.1554912
2500+
$0.1538715
Exquisite packaging
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Discover the PMN25ENEH from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMN25ENEH ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 597 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 560mW (Ta), 6.25mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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