Shopping cart

Subtotal: $0.00

PMN50UPE,115

NXP USA Inc.
PMN50UPE,115 Preview
NXP USA Inc.
MOSFET P-CH 20V 3.6A 6TSOP
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457

Related Products

Toshiba Semiconductor and Storage

TK110P10PL,RQ

STMicroelectronics

STB28N60M2

STMicroelectronics

STP10LN80K5

Microchip Technology

APT10M11LVRG

Vishay Siliconix

SIR410DP-T1-GE3

Toshiba Semiconductor and Storage

SSM3K361TU,LXHF

Diodes Incorporated

DMN2028UVT-13

Nexperia USA Inc.

PSMN2R2-40BS,118

Top