PMP4201G135
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
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Engineered for reliability, the PMP4201G135 BJT Array from NXP USA Inc. delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The PMP4201G135 shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: 5-TSSOP
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